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基于VO2薄膜相变特性,通过在石英基底上制备VO2薄膜和亚波长金孔阵列,并在理论和实验上研究了金属孔阵列与VO2薄膜置于基底同侧和异侧的两种太赫兹(THz)调制器。系统研究了在光泵浦条件下两种样品的THz波的传输特性。结果表明,随着泵浦光功率的改变,两种结构的器件均可以实现对THz波强度的调制。对比分析两种结构器件的THz透射谱发现,紧邻金属孔阵列的金属相VO2能够有效地抑制THz表面等离子体的局域透射增强效应,使调制器的调制深度得到显著增强,这对基于相变材料调制器的设计具有重要意义。
Based on the phase transition characteristics of VO2 thin films, a VO2 thin film and a sub-wavelength gold hole array were prepared on a quartz substrate. The effects of the hole arrays and the VO2 thin films on the same and opposite sides of the substrate were studied both theoretically and experimentally THz) modulator. The transmission characteristics of THz wave of two samples under optical pumping condition are studied systematically. The results show that with the change of pump light power, the modulation of the intensity of THz wave can be realized by the two structures of devices. Comparing the THz transmission spectra of the two devices, it is found that the metal phase VO2 close to the metal hole array can effectively suppress the local transmission enhancement effect of the THz surface plasma, and the modulation depth of the modulator can be significantly enhanced. The design of material modulators is of great importance.