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一、激光引起的热结构变化图1所示是MOS晶体管横截面。在P~-型基本掺杂的单晶硅中,嵌入了两个扩散区即具有重n~+掺杂的源和漏。源与漏间可经门感应电子导电沟道。沟道流子数从而源与漏间的电流受门上控制电压的影响。门通过薄的门氧化物与硅分开。缩小MOS晶体管的比例理论表明,除门氧化物薄(小到10nm)外,还要求掺杂的源和漏区域的掺杂深度很小(约100～200nm)。这样,硅工作中出现的电场就能维持在一定的限度内,同时确保晶体管的功能可靠。硅的掺杂在新工艺中通过离子注入产生。硅中n掺杂的P、As、Sb料和P掺杂的B料
First, the laser induced thermal structure changes Figure 1 shows the MOS transistor cross-section. In P ~ - type basic doped single crystal silicon, two diffusion regions are embedded, that is, have heavy n ~ + doping source and drain. The source and drain can be gate-induced electronic conduction channel. The number of channel carriers and hence the current between the source and drain is affected by the control voltage on the gate. The door is separated from the silicon by a thin gate oxide. The theory of reducing the ratio of MOS transistors shows that besides the thin gate oxide (as small as 10 nm), it is also required that the doped source and drain regions have a small doping depth (about 100-200 nm). In this way, the electric field appearing in silicon work can be kept within a certain limit, at the same time, ensure the function of the transistor is reliable. Silicon doping in the new process by ion implantation generated. N-doped P, As, Sb materials and P-doped B materials in silicon