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采用射频磁控溅射的方法制备了用于液晶光阀光导层的氢化非晶硅薄膜,研究了工艺参数对氢化非晶硅薄膜透过率及光电导性能的影响。结果表明,薄膜的沉积速率随着溅射功率和衬底温度的升高呈先增加后减小的趋势,在衬底温度为300℃,溅射功率为300W左右沉积速率达到最大,在溅射2h后沉积速率随着溅射时间的增加而下降;薄膜的光吸收系数随衬底温度的升高而增大,随溅射功率的增加而减小;交流电导率随衬底温度和溅射功率的升高而下降;薄膜在可见光范围内透过率随着H分压的增大而增大,且吸收边发生蓝移。
The hydrogenated amorphous silicon thin film used for the light guide layer of the liquid crystal light valve was prepared by radio frequency magnetron sputtering and the influence of process parameters on the transmittance and the photoconductive property of the hydrogenated amorphous silicon thin film was studied. The results show that the deposition rate increases firstly and then decreases with the increase of sputtering power and substrate temperature. The deposition rate reaches the maximum at a substrate temperature of 300 ℃ and a sputtering power of 300W. After 2h of sputtering, The deposition rate decreases with the increase of sputtering time. The optical absorption coefficient increases with the substrate temperature and decreases with the increase of sputtering power. The AC conductivity varies with the substrate temperature and the sputtering power The transmittance of the film in the visible range increases with the increase of the partial pressure of H, and the blue shift of the absorption edge occurs.