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采用电化学腐蚀法制备多孔硅（PS），测量了防在近红外光（800nm）激发下的光致发光（PL）谱和光致发光激发（PLE）谱，结果表明PS具有良好的上转换荧光特性，并随着存放时间的延长，在一定期限内峰值强度有明显的增强．这种非线性光学响应的增强，被认为与空间量子限制效应作用下局域束缚激于被激发有关．硅片初始电阻车越低，发光强度越大．
Porous silicon (PS) was prepared by electrochemical etching. The photoluminescence (PL) spectra and photoluminescence excitation (PLE) spectra of the PS films were measured under the excitation of near-infrared light (800 nm). The results show that PS has good up-conversion fluorescence Characteristics, and with the extension of storage time, within a certain period of peak intensity significantly increased. This enhancement of nonlinear optical response is thought to be related to the local binding stimulated by the space quantum confinement effect. The lower the silicon initial resistance car, the greater the luminous intensity.