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设计了一种量程为180 kPa的新型岛膜结构MEMS压阻式压力传感器,通过ANSYS仿真软件,得出了在岛宽为500μm、岛厚为40μm、梁宽为200μm、敏感薄膜厚为15μm的情况下,该结构具有较好的线性度及灵敏度。提出了一种基于两层SOI硅-硅直接键合的工艺加工方法,能够精确控制敏感薄膜及岛的厚度,并且全硅结构器件能够避免键合残余应力,大大提高器件性能。采用了双惠斯登电桥电路减小传感器输出的温漂效应,并设计了该电路的压敏电阻连接图。最后对该压力传感器进行了测试,结果表明,其非线性为0.64%,精度为0.74%,满足现代工业应用要求。
A new MEMS piezoresistive pressure sensor with 180 kPa island-scale structure was designed. The ANSYS simulation software was used to simulate the piezoresistive pressure sensor with the island width of 500μm, the island thickness of 40μm, the beam width of 200μm and the sensitive film thickness of 15μm Case, the structure has good linearity and sensitivity. A silicon-silicon direct bonding process based on two layers of SOI is proposed, which can precisely control the thickness of the sensitive thin film and the island, and the all-silicon structure device can avoid bonding residual stress and greatly improve device performance. A double Wheatstone bridge circuit is used to reduce the temperature drift effect of the sensor output and the varistor connection diagram of the circuit is designed. Finally, the pressure sensor was tested, the results show that the non-linearity of 0.64%, accuracy of 0.74%, to meet the requirements of modern industrial applications.