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本文提出了一种新的平面型砷化镓肖特基势垒场效应晶体管(GaAs MESFET)结构.阐述了用氧离子注入制作此种平面型器件的计算和实验结果.将制得的平面器件与通常的台武器件作了比较.看出平面型器件在微波特性和制作工艺上具有明显优点.
In this paper, a new structure of GaAs MESFET with planar gallium arsenide (GaAs MESFET) is proposed. The calculation and experimental results of fabrication of such a planar device by oxygen ion implantation are described. The fabricated planar device Compared with the usual Taiwanese devices, it is obvious that planar devices have obvious advantages in terms of microwave characteristics and manufacturing process.