H-MOS—缩小传统器件的尺寸以达到高性能水平

• 作 者: 张礼德
• 出 处: 微电子学与计算机
• 发表日期: 2004年期
• 关键词: 器件 H-MOS 沟道长度 性能水平 高阈 移位寄存器 毫微秒 电源电路 集成度 功能块

MOS 器件的集成度和性能每年都有成倍的增长,这几乎成为一个规律了。在过去的十年中,MOS 芯片从低集成度的、速度为几毫秒的移位寄存器、门电路和触发器,发展到整个存储器、微处理机和专用系统及分系统,它们是将几万个电子功能块压缩在一个组件中,其速度能达到几毫微秒。MOS 工艺的多样化加速了这一惊人的发展。MOS 从高阈值的p 沟多电源电路技术开

The degree of integration and performance of MOS devices has doubled each year, which is almost a rule. Over the past decade, MOS chips have evolved from low-integration, millisecond-scale shift registers, gates, and flip flops to entire memories, microprocessors, and specialized systems and subsystems that convert tens of thousands The electronic blocks are compressed in a single unit at speeds of a few nanoseconds. Diversification of MOS processes has accelerated this astonishing development. MOS from a high threshold p-channel multi-power circuit technology to open