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采用1MeV的中子对Ti/4H-SiC肖特基势垒二极管(SBD)的辐照效应进行研究,观察了常温下的退火效应。实验的最高中子剂量为1×l015n/cm2,对应的γ射线累积总剂量为33kGy(Si)。经过1×1014 n/cm2的辐照后,Ti/SiC肖特基接触没有明显退化;剂量达到2.5×1014n/cm2后,观察到势垒高度下降;剂量达到1×1015 n/cm2后,势垒高度从1.00eV下降为0.93eV;经过常温下19h的退火后,势垒高度有所恢复,表明肖特基接触的辐照损伤主要是由电离效应造成的。辐照后,器件的理想因子较辐照前有所上升;器件的正向电流(VF=2V)随着辐照剂量的上升而下降。
The effect of irradiation on Ti / 4H-SiC Schottky barrier diode (SBD) was studied by using 1MeV neutron. The annealing effect at room temperature was observed. The highest neutron dose for experiment was 1 × l015n / cm2, and the corresponding total γ-ray dose was 33kGy (Si). After 1 × 1014 n / cm2 irradiation, there was no obvious degradation of Ti / SiC Schottky contact. After the dose reached 2.5 × 1014n / cm2, the barrier height was decreased. After the dose reached 1 × 1015 n / cm2, the potential The barrier height decreased from 1.00eV to 0.93eV. After 19h annealing at room temperature, the barrier height was restored, indicating that the irradiation damage caused by Schottky contact was mainly caused by the ionization effect. After irradiation, the ideal factor of the device is higher than before irradiation; the forward current of the device (VF = 2V) decreases with the increase of irradiation dose.