Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-i

• 作 者: 陈荔群 陈阳华 李成
• 机 构: ChengyiCollege,DepartmentofPhysics
• 出 处: 光电子快报：英文版
• 发表日期: 2014年3期
• 关键词: 多量子阱 光致发光 拉伸应变 硅绝缘体 谐振腔增强型 硅锗 SOI衬底 SiGe Cavity resonators Chemical vapor deposi
• 基金项目: This work has been supported by the National Natural Science Foundation of China （Nos.61036003 and 61176092）, and the Ph.D. Programs Foundation of Ministry of Education of China （No.20110121110025）.

The tensile strained Ge/SiGe multiple quantum wells(MQWs) grown on a silicon-on-insulator(SOI) substrate were fabricated successfully by ultra-high chemical vapor deposition.Room temperature direct band photoluminescence from Ge quantum wells on SOI subst