Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulatio

• 作 者: 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安 李述体
• 机 构: Institute of Opto-electronic Materials and Technology,South China Normal University,
• 出 处: Chinese Physics B
• 发表日期: 2013年05期
• 关键词: AlGaN inserting leakage attributed incorporated luminous adjusting FWHM lowering

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6×1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp 2 Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

P-InGaN / p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 10 18 cm -3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN / p-GaN SLs. The p-InGaN / p-GaN SLs with appropriate Cp 2 Mg flow rates are then incorporated between the multi-quantum well and the AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. compared with the SL HAL. The improved performance is attributed to the increased level of light injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.