4H-SiC双层浮结肖特基势垒二极管温度特性研究

• 作 者: 南雅公 张志荣 周佐
• 机 构: 河西学院,
• 出 处: 微电子学
• 发表日期: 2011年01期
• 关键词: 4H-SiC 双层浮结 肖特基势垒二极管

为了增强器件高温条件下的适应性,对4H-SiC双层浮结肖特基势垒功率二极管的温度特性进行了研究。结果表明,当温度变化时,器件的阻断电压、通态电阻、反向漏电流及开关时间等电学性质均要发生一定的变化。作为一种基于浮结技术的SiC新器件,通过数值模拟方法对其特征参数进行优化,可使其承载电流能力、阻断特性和开关速度等得到进一步的改善。

In order to enhance the device’s adaptability under high temperature conditions, the 4H-SiC double-layer floating-junction Schottky barrier power diode temperature characteristics were studied. The results show that when the temperature changes, the device’s blocking voltage, on-state resistance, reverse leakage current and switching time and other electrical properties are subject to certain changes. As a new SiC device based on floating junction technology, its characteristic parameters are optimized by numerical simulation, which can further improve its carrying current capability, blocking characteristics and switching speed.