论文部分内容阅读
近年来,由于a-C:H薄膜所具有的类金刚石结构特征和广泛的应用前景,因而在固体物理和技术两方面成为研究的热点。人们已经研制了a-C:H薄膜做为有源层的光发射二极管,但这些器件的性能还不能满足实际应用的需要。其原因之一是对a-C:H材料还没有建立一个有效的掺杂过程。因此,目前许多人还在致力于对a-C:H薄膜掺氮的研究。研究结果表明,掺N能够显著地提高光致发光强度。这对提高以a-C:H薄膜为有源层的光电器件质量,改进发光性能是有益的。另一方面,掺氮将引起a-C:H薄膜微结构的改变。本文研究的目的在于探讨薄膜微观结构、发光中心和N原子作用三者之间的关系。因此,本文对掺N与未掺N的a-C:H样品进行了对比研究。通过红外、扫描差热和透射-反射光谱研究了其微观结构的变化。用光致发光光谱研究了氮与发光中心的关系,讨论了氮对a-C:H薄膜微观结构和发光中心的影响。
In recent years, a-C: H thin films have become the hot topics in both solid state physics and technology due to their diamond-like structural features and broad application prospects. People have developed a-C: H thin film as an active layer of light emitting diodes, but the performance of these devices can not meet the needs of practical applications. One of the reasons is that an effective doping process has not been established for the a-C: H material. Therefore, many people are still working on a-C: H thin film nitrogen doping research. The results show that N can significantly improve the photoluminescence intensity. This is to improve the a-C: H thin film as the active layer of the optoelectronic device quality, improve light-emitting performance is beneficial. On the other hand, nitrogen doping will cause a-C: H thin film microstructure changes. The purpose of this study is to explore the relationship between the film microstructure, luminescent center and N atom. Therefore, a comparison of N-doped and non-N-doped a-C: H samples was carried out. The changes of microstructure were studied by infrared, differential scanning calorimetry and transmission-reflectance spectroscopy. The relationship between nitrogen and luminescence centers was studied by photoluminescence spectroscopy, and the effect of nitrogen on the microstructure and luminescence center of a-C: H films was discussed.