磁控反应溅射制备 Ta-N 薄膜的显微组织与畸变分析

• 作 者: 曾晓兰 冷永祥 黄楠
• 机 构: 西南交通大学材料工程系
• 出 处: 西南交通大学学报
• 发表日期: 1998年03期
• 关键词: 薄膜性能 Ta-N 溅射制备 显微组织 微观应力 氮化钽 晶粒细化 反应溅射 晶粒大小 溅射沉积

利用直流磁控反应溅射技术制备了Ｔａ－Ｎ薄膜。利用ＴＥＭ、ＸＲＤ研究了薄膜显微组织及结构。研究表明，薄膜晶粒细小，可达到１０ｎｍ；在一定工艺条件下制备的Ｔａ－Ｎ薄膜为多相共存结构；磁控反应溅射制备Ｔａ－Ｎ薄膜，沉积压力对薄膜晶粒的显微畸变影响较大，沉积压力降低，晶粒显微畸变增加，导致薄膜中产生较大的微观应力。

Ta-N thin films were prepared by DC magnetron reactive sputtering. The microstructure and structure of the films were investigated by TEM and XRD. The results show that the thin film can be as small as 10nm. The Ta-N thin films prepared under certain conditions are multiphase coexisting structures. The Ta-N thin films are prepared by magnetron reactive sputtering. The micro-deformation A larger impact, lower deposition pressure, grain distortion increases, resulting in a larger film in the micro-stress.