ZnO缓冲层的厚度对HVPE-GaN外延层的影响

• 作 者: 王晓翠 杨瑞霞 王如 张嵩 任光远
• 机 构: 河北工业大学信息工程学院,中国电子科技集团公司第四十六研究所,
• 出 处: 微纳电子技术
• 发表日期: 2014年01期
• 关键词: hydride vapor phase epitaxy (HVPE) GaN ZnO buffer layer sapphire magnetron sputt

为了得到高质量的GaN材料,首先在c面蓝宝石(Al2O3)衬底上射频磁控溅射不同厚度的ZnO缓冲层,然后采用氢化物气相外延(HVPE)法在ZnO缓冲层上生长约5.2μm厚的GaN外延层,研究ZnO缓冲层的厚度对GaN外延层质量的影响。用微分干涉显微镜(DIC)、扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)技术研究分析了GaN外延层的表面形貌、结晶质量和光学特性。结果表明,ZnO缓冲层的厚度对GaN外延层的特性有着重要的影响,200 nm厚的ZnO缓冲层最有利于高质量GaN外延层的生长。

In order to obtain high quality GaN materials, RF magnetron sputtering of different thicknesses was first deposited on a c-plane sapphire (Al 2 O 3) substrate and then grown on the ZnO buffer layer by hydride vapor phase epitaxy (HVPE) to a thickness of about 5.2 μm Thick GaN epitaxial layer, ZnO buffer layer thickness on the quality of GaN epitaxial layer. The morphology, crystal quality and optical properties of the GaN epitaxial layer were studied by differential interference microscopy (DIC), scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) The results show that the thickness of ZnO buffer layer has an important effect on the properties of GaN epitaxial layer. The 200 nm thick ZnO buffer layer is most conducive to the growth of high quality GaN epitaxial layer.