论文部分内容阅读
为探讨含磁单负材料光子晶体的偏振特性,构造了由普通材料A(SiO2)和磁单负材料B组成的(AB)3(BA)3对称型一维光子晶体。数值计算结果表明,垂直入射时,原禁带的1 907 nm处出现了一个十分尖锐的隧穿模。对TE波,入射角θ增加、B介质的介电常数εB或几何厚度减少时,禁带边缘蓝移,宽度变窄,隧穿模的透射率和半峰全宽保持不变,但其位置蓝移。上述3个参数分别变化时,TM波的透射谱及隧穿模的变化规律与TE波的相同,只是入射角增加时,TM波禁带长波边缘的蓝移量小于TE波的。隧穿模的这些偏振特性对高品质滤波器的设计具有指导意义。
In order to investigate the polarization characteristics of photonic crystals containing magnetic single negative material, (AB) 3 (BA) 3 symmetric one-dimensional photonic crystals consisting of common material A (SiO2) and magnetic single negative material B were constructed. The numerical results show that there is a very sharp tunneling mode at 1 907 nm in the original band gap at normal incidence. For the TE wave, when the incident angle θ increases and the dielectric constant εB or the geometric thickness of the B medium decreases, the edge of the forbidden band is blue-shifted and the width is narrowed. The transmittance and full width at half maximum of the tunneling mode remain unchanged. However, Blue shift. When the above three parameters are changed, the transmission spectrum of TM wave and the changing rule of tunneling mode are the same as that of TE wave, except that when the incident angle increases, the blue shift of the longwave edge of the TM waveband is smaller than the TE wave. These polarization characteristics of tunneling modes are instructive for the design of high quality filters.