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采用Mg H2代替单质Mg粉与Sn粉进行固相反应制备Mg2Sn基热电材料,有效地避免了Mg单质的挥发和氧化。在300~750 K的温度区间内对其热电性能进行了测试、分析,并与文献中报道的Mg2Sn热电性能进行了对比。结果表明,所有试样在整个测温区间均显示出n型掺杂,并且随着温度的升高,呈现逐渐向p型转变的变化趋势。掺杂Y后Mg2Sn试样的Seebeck系数有所提高,综合电性能比文献报道提高了40%,并且在350 K时获得最大的ZT值(0.033),是文献报道的Mg2Sn的ZT值(0.013)的近3倍。
Mg2Sn-based thermoelectric material was prepared by solid-state reaction of Mg2H instead of elemental Mg powder and Sn powder, which effectively avoided the volatilization and oxidation of Mg element. The thermoelectric properties were tested and analyzed in the temperature range of 300 ~ 750 K, and compared with the thermoelectric properties of Mg2Sn reported in the literature. The results show that all the samples show n-type doping during the whole temperature measurement range, and show the trend of gradually changing to p-type as the temperature increases. The Seebeck coefficient of Mg2Sn sample after doping with Y was increased, the comprehensive electrical performance was increased by 40% compared with that reported in the literature, and the maximum ZT value (0.033) was obtained at 350 K, which was the ZT value of Mg2Sn reported in the literature (0.013) Nearly 3 times.