Electronic transport properties of the armchair silicon carbide nanotube

• 作 者: 宋久旭 杨银堂 刘红霞 郭立新 张志勇
• 机 构: Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,School
• 出 处: 半导体学报
• 发表日期: 2010年11期
• 关键词: nanotube carbide valley meaningful Fermi Probe reaches candidate Hamiltonian Pro

The electronic transport properties of the armchair silicon carbide nanotube(SiCNT) are investigated by using the combined nonequilibrium Green’s function method with density functional theory.In the equilibrium transmission spectrum of the nanotube,a transmission valley of about 2.12 eV is discovered around Fermi energy,which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important,negative differential resistance is found in its current voltage characteristic.This phenomenon originates from the variation of density of states caused by applied bias voltage.These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.

The electronic transport properties of the armchair silicon carbide nanotube (SiCNT) are investigated by using the combined nonequilibrium Green’s function method with density functional theory. In the equilibrium transmission spectrum of the nanotube, a transmission valley of about 2.12 eV is discovered around Fermi energy, which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important, negative differential resistance is found in its current voltage characteristic. This phenomenon originates from the variation of density of states caused by applied bias voltage. These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.