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Cree发布了行业内首个900V碳化硅MOSFET技术。该技术可在高频功率电子领域应用,如可再生能源变频器,电动车辆充电系统,三相工业电源。该900V平台与硅基解决方案成本相近,具有价格竞争力,有助实现更小型更高效的下一代功率转换系统。Cree功率和射频公司的副总裁兼总经理Cengiz Balkas介绍说:“与同类型的硅基MOSFET相比,这项具有突破性的900V平台拓展了我们在终端系统可实现的功率范围,为我们产品带来了全新的市场。我们之前推出的1200V MOSFET较高压IGBT实现了更优异的性能,而现在,我们在900V领域的表现也成功超越了低压超结硅基MOSFET。”
Cree unveiled the industry’s first 900V silicon carbide MOSFET technology. The technology can be used in the field of high-frequency power electronics such as inverters for renewable energy, electric vehicle charging systems, three-phase industrial power supplies. The 900V platform is cost competitive with silicon-based solutions at a competitive price, enabling smaller, more efficient next-generation power conversion systems. Cengiz Balkas, Cree’s vice president and general manager of Power and RF, said: “This groundbreaking 900V platform extends the range of power we can achieve in end systems for the same type of silicon-based MOSFETs, The new market for the product was brought in. Our previous 1200V MOSFETs achieved better performance than higher voltage IGBTs and now we are outperforming the low-voltage super-junction silicon-based MOSFETs in the 900V area. ”"