,Novel material for nonvolatile ovonic unified memory(OUM)-Ag11In12Te26Sb51 phase change semiconduct

• 作 者: Liu Bo Song Zhi-Tang Zhang Ting Feng Song-Lin Gan Fu-Xi
• 机 构: Research Centre of Functional Semiconductor Film Engineering & Technology,State Key Laboratory of Fu
• 出 处: 中国物理（英文版）
• 发表日期: 2004年7期
• 关键词: Ag11In12Te26Sb51 phase change nonvolatile memory resistance

In this paper, Ag11In12Te26Sb51 phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag11In12Te26Sb51 thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, Ea, is 2.07eV. The crystalline Ag11In12Te26Sb51 films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag11In12Te26Sb51films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag11In12Te26Sb51 films. The sheet resistance of the amorphous (Ramo) film is found to be larger than 1× 106Ω and that of the crystalline (Rcry) film lies in the range from about 103 to 104Ω. So we have the ratio Ramo/Rcry=10 2 ～ 103,which is sufficiently large for application in memory devices.