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本文报道BF_2~+注入的多晶硅薄膜经快速热退火后的物理和电学性质。发现造成氟异常分布的原因是由于快速热退火过程中氟的外扩散以及在多晶硅/二氧化硅界面处的聚集。在注入剂量为1×10~(15)和5×10~(15)cm~(-2)的样品中,经快速热退火后可以观察到氟泡。
This paper reports the physical and electrical properties of polycrystalline silicon films implanted with BF_2 ~ + after rapid thermal annealing. The reason for the abnormal distribution of fluorine was found to be due to the out-diffusion of fluorine during the rapid thermal annealing and the aggregation at the polysilicon / silicon dioxide interface. Fluorescent bubbles were observed after rapid thermal annealing at 1 × 10 ~ (15) and 5 × 10 ~ (15) cm ~ (-2) doses.