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采用溶胶-凝胶法在LaNiO_3/Si衬底上制备了Nb_(0.02)-Pb(Zr_(0.6)Ti_(0.4))O_3(PNZT)薄膜及其驱动的微机电系统(MEMS)技术制作的微悬臂梁器件,研究了PNZT薄膜结构和电学性能以及悬臂梁器件的机电特性。结果表明:该PNZT薄膜具有随机取向的钙钛矿相结构,铁电剩余极化强度和矫顽场分别约为20mC/cm~2和27 kV/cm。通过压电响应力显微镜(PFM)和MEMS悬臂梁振动测试,计算得出PNZT薄膜的纵向压电系数d_(33)和横向压电系数d_(31)分别约为70 pm/V和90 pm/V,与已报道的外延生长PZT薄膜d_(33)和d_(31)值相当。同时MEMS悬臂梁在大气压下也表现出较小的机械损耗,一阶谐振时的机械品质因数Q值达到了122。表明该PNZT薄膜未来在高性能铁电和压电MEMS器件领域具有广泛的应用前景。
The Nb_ (0.02) -Pb (Zr_ (0.6) Ti_ (0.4)) O_3 (PNZT) thin films and the micro-electromechanical system (MEMS) technology driven by sol-gel method were fabricated on LaNiO_3 / Cantilever devices were used to study the structure and electrical properties of PNZT thin films and the electromechanical properties of cantilever devices. The results show that the PNZT thin film has a randomly oriented perovskite phase structure with remanent polarization and coercive field of about 20mC / cm ~ 2 and 27kV / cm respectively. Through the piezoelectric response microscopy (PFM) and MEMS cantilever vibration test, the calculated results show that the longitudinal piezoelectric coefficient d_ (33) and transverse piezoelectric coefficient d_ (31) of PNZT films are about 70 pm / V and 90 pm / V, which is comparable to the values of d_ (33) and d_ (31) of the reported epitaxial growth PZT films. At the same time MEMS cantilevers also showed less mechanical loss at atmospheric pressure, the first-order resonance of the mechanical quality factor Q value reached 122. It shows that the PNZT film has a wide range of applications in the field of high-performance ferroelectric and piezoelectric MEMS devices in the future.