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本文讨论了在直流电压应力和脉冲电压应力作用下栅氧化膜击穿寿命的差别，脉冲应力下栅氧化膜击穿寿命大于直流电压下的击穿。而且频率越高，两者的差别越大。差别起因于脉冲低电平期间栅氧化膜损伤的自行减少。
In this paper, the difference of breakdown life of gate oxide film under DC voltage stress and pulse voltage stress is discussed. The breakdown life of gate oxide film under pulse stress is larger than that under DC voltage. And the higher the frequency, the greater the difference between the two. The difference arises from the self-reduction of gate oxide film damage during a low pulse.