论文部分内容阅读
由己提出的离子迁移模型推导出在电场助溶作用下膜/溶液界面阻挡层生长速度下降时,即溶液对膜具有溶解作用时的孔中酸化溶液的临界H~+浓度公式。研究了公式中各因素对V-t曲线参数的影响,实验结果与理论分析相吻合。改进了超薄切片样品制备方法使之适用于观察厚度大于20～30μm的多孔膜的底部结构。超薄切片的透射电镜观察表明,阻挡层厚度与电压成正比,二次阳极氧化后阻挡层厚度增加,但没有出现对应大孔径的孔起源,原多孔膜部份不变,孔中可观察到副反应产生的疏松沉积物,阻挡层中可见到规则的原多孔膜结构单元和孔的痕迹。
Based on the proposed ion migration model, a critical H ~ + concentration formula of acid solution in a well is obtained when the growth rate of the film / solution interface barrier is decreased under the effect of electric field solubilization. That is, the solution has a dissolution effect on the membrane. The influence of various factors on V-t curve parameters was studied. The experimental results are in good agreement with the theoretical analysis. The ultrathin sectioned sample preparation method was modified to make it suitable for observing the bottom structure of porous membranes with thicknesses greater than 20-30 μm. Transmission electron microscopy observations of the ultrathin section showed that the thickness of the barrier layer was proportional to the voltage, and the thickness of the barrier layer increased after the secondary anodic oxidation. However, the pore origin corresponding to the large pore diameter did not appear and the original porous membrane part remained unchanged. Side reactions of loose deposits, the barrier layer can be seen in the rules of the original porous membrane structure and pore traces.