论文部分内容阅读
本文论述在EPIC(仿真和可编程序集成电路)芯片组中器件的临界失效剂量和总剂量特性的测量结果。这组芯片包括通用门阵列(GUA,TA11093),通用处理器(GPU,GP001),4K存贮器(TCS146),8K·ROM(TA11256),乘法器(GP503)和电平转换器(GP511)。在21组试验中采用的所有这些类型CMOS/SOS器件都是用辐射加固工艺制造的,进行这个试验是为了确定总剂量加固的重复性。 瞬态测量是在一个使用能量为15或40MeV的20毫微秒电子脉冲的线性电子加速器上进行的。引起GPU器件暂时功能失效所要求的失效剂量率和剂量/脉冲的测量也使用2.1微秒脉冲宽度进行。还研究了失效剂量率的偏置依赖关系和对使用总剂量辐照的组件的剂量率的影响。结果表明,对于较低的偏置电压和被总剂量劣化的组件,失效剂量率降低了。对于事先未经辐照的器件,其存贮数据的失效剂量率在4.5×10~(10)到4.1×10~(11)拉德(si)/sec的范围内变化。通过漏电流、动态电流、速度的平均值和标准偏差、以及在这个部件系列中有代表性的器件类型的功能与剂量的关系来描述加固的重复性。
This article discusses the measurement of the critical failure and total dose characteristics of devices in the EPIC (Emulated and Programmable Integrated Circuit) chipset. This set of chips includes a general purpose gate array (GUA, TA11093), general purpose processor (GPU, GP001), 4K memory (TCS146), 8K ROM (TA11256), multiplier (GP503) and level shifter . All of these types of CMOS / SOS devices used in the 21 tests were made using a radiation-hardening process that was conducted to determine the repeatability of the total dose reinforcement. Transient measurements were performed on a linear electron accelerator using a 20 nanosecond electron pulse with an energy of 15 or 40 MeV. The failure dose rate and dose / pulse measurements required to cause temporary functional failure of the GPU device were also performed using a 2.1 microsecond pulse width. The bias dependency of the failure dose rate and the effect on the dose rate of the components irradiated with the total dose were also studied. The results show that the failure dose rate is reduced for lower bias voltages and components that are degraded by the total dose. For previously non-irradiated devices, the failed dose rate of the stored data varied in the range of 4.5 × 10 ~ (10) to 4.1 × 10 ~ (11) rad / sec. The repeatability of reinforcement is described by the relationship between leakage current, dynamic current, average speed and standard deviation, and function versus dose for representative device types in this part family.