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应用深能级瞬态谱(DLTS)技术详细研究分子束外延(MBE)和金属有机物化学汽相淀积(MOCVD)生长的AlGaAs/GaAs graded index sparate confinement beterostruc-ture single quantum well(GRIN-SCH SQW)激光器的深中心.结果表明,在激光器的n-ALGaAs层里除众所周知的DX中心外,还存在着较大浓度和俘获截面的深(电子或空穴) 陷阱,它们直接影响着激光器的性能.其中MBE生长的激光器里的深空穴陷阱H1可能分布在x_(A1)=0.22→0.43和x+(A1)=0.43的n-AlGaAs层里x_(A1)值不连续的界面附近,而深电子陷阱E3则可能分布在x_(A1)=0.43的n-AlGaAs层里x_(A1)值不连续的界面附近.MOCVD生长的激光器量子阱的AlGaAs层存在着DX中心和深电子陷阱.其中深电子陷阱E3可能分布在x_(A1)=0.22→0.30和x_(A1)=0.30的n-AlGaAs层里,而DX中心则分布在x_(A1)(x_(A1)=0.22→0.30和x_(A1)=0.30)值不连续的n-AlGaAs层界面附近.
A detailed study on the growth of AlGaAs / GaAs graphed by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) using deep level transient spectroscopy (DLTS) ) Lasers. The results show that in addition to the well-known DX centers in the n-ALGaAs layer of the laser, there are deep (electron or hole) traps of larger concentration and capture cross-sections that directly affect the performance of the laser The deep hole trap H1 in the MBE grown laser may be distributed in the vicinity of the x_ (A1) value discontinuity interface in the n-AlGaAs layer of x_ (A1) = 0.22 → 0.43 and x + (A1) = 0.43, The electron trap E3 may be distributed near the discontinuous interface of x_ (A1) in the n-AlGaAs layer with x_ (A1) = 0.43, and there are DX centers and deep electron traps in the AlGaAs layer of the MOCVD grown laser quantum well. The electron traps E3 may be distributed in the n-AlGaAs layer with x_ (A1) = 0.22 → 0.30 and x_ (A1) = 0.30, while the DX centers are distributed over x_ (A1) (x_ (A1) = 0.22 → 0.30 and x_ A1) = 0.30) near the discontinuous n-AlGaAs layer interface.