Development and characteristics analysis of recessed-gate MOS HEMT

• 作 者: 王冲 马晓华 冯倩 郝跃 张进城 毛维
• 机 构: Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidia
• 出 处: 半导体学报
• 发表日期: 2009年05期
• 关键词: AlGaN drain Schottky sapphire extrinsic leakage magnitude etching evaporation di

An AlGaN/GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate.The device,which has a gate length of 1μm and a source-drain distance of 4μm,exhibits a maximum drain current density of 684mA/mm at Vgs=4V with an extrinsic transconductance of 219mS/mm.This is 24.3% higher than the transconductance of conventional AlGaN/GaN HEMTs.The cut-off frequency and the maximum frequency of oscillation are 9.2GHz and 14.1GHz,respectively.Furthermore,the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.

An AlGaN / GaN recessed-gate MOSHEMT was fabricated on a sapphire substrate. The device, which has a gate length of 1 μm and a source-drain distance of 4 μm, exhibits a maximum drain current density of 684 mA / mm at Vgs = 4 V with an extrinsic transconductance of 219 mS / mm. This is 24.3% higher than the transconductance of conventional AlGaN / GaN HEMTs. The cut-off frequency and the maximum frequency of oscillation are 9.2 GHz and 14.1 GHz, respectively. Future plus, the gate leakage current is two orders of magnitude lower than for the conventional Schottky contact device.