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采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5·4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21·6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.
The InGaP / GaAs HBT microwave power tube cells with an on-chip RC shunt stabilization network are fabricated using a GaAs standard MMIC process. The RC network provides an absolute stability of the power tube over a wide frequency band based on the K stability factor. The Load-pull test The RC network does not significantly affect the large signal characteristics of the power tube, with output saturation of 30dBm at 5.4GHz and output power of 21.6dBm at 1GHz compression point at 11GHz. The power synthesis circuit verifies that the power transistor is highly stable and suitable for fabrication Microwave high-power HBT amplifier.