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用高能电子衍射(RHEED)研究H钝化偏角Si衬底上Si,Ge_xSi(1-x)材料的分子束外延(MBE)生长模式,发现经低温处理的H钝化Si衬底上要经过10nm左右的Si生长才能获得比较平整的表面.Si,Ge_xSi_(l-x)外延时的稳定表面均以双原子台阶为主,双原子台阶与单原子台阶并存的结构.Si双原子台阶上的Si二聚体列(dimer row)取向垂直于台阶边缘,而Ge_xSi_(1-x)双原子台阶上的二聚体列取向却与台阶边缘平行(相对于Si二聚体列转90°),并且Ge_xSi_(l-x)双原子台阶边缘比Si双原子台阶边缘平直.
The growth mode of molecular beam epitaxy (MBE) of Si, Ge_xSi (1-x) material on H passivation Si substrate was investigated by high energy electron diffraction (RHEED) 10nm around the growth of Si can get a relatively flat surface .Si, Ge_xSi_ (lx) epitaxial stability of the surface are dominated by diatomic atoms, diatomic steps and monatomic steps coexist with the structure .Si double atomic steps on the Si The dimer row orientation is perpendicular to the step edge while the dimer column orientation on the GexSi 1- (1-x) diatomic steps is parallel to the step edge (90 ° relative to the Si dimer row) and Ge_xSi_ (lx) diatomic step edge is more flat than Si diatomic step edge.