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一、材料现状概述实际做成红外探测器的,仅少数化合物和合金材料,它们分属Ⅱ-Ⅵ、Ⅳ-Ⅵ和Ⅲ-Ⅴ族。Ⅱ-Ⅵ族的HgCdTe和HgCdSe除冶金学性质外,其他性质都很好。成分不同时,它们的晶格参数变化小,有可能做成晶格参数匹配的近、中、远红外异质结结构。其主要困难有:假二元系相图中液相线与固相线的间距大;在假二元系的共熔点上,汞蒸气
First, an overview of the status of the material actually made of infrared detectors, only a small number of compounds and alloy materials, which belong to II-VI, IV-VI and III-V family. The II-VI HgCdTe and HgCdSe properties are good except for metallurgical properties. When the composition is different, their lattice parameter change is small, and it is possible to make the near, middle and far infrared heterojunction structures with lattice parameter matching. The main difficulties are: the fake binary system phase diagram liquidus and solid line spacing is large; in the eutectic binary eutectic point, mercury vapor