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业已发现在接近加工了的半绝缘 GaAs 片的表面处,发生空间电荷限制电流泄漏。通过测量腐蚀深度对应的漏电流的陷阱填充限制电压 V_i,计算了 EL2陷阱的深度分布,并与报导的实验结果符合得很好。提出了一种基于 EL2外扩散原理的表面导电机理。计算的衬底 I-V 关系与测量结果定量地相符。
It has been found that space charge limiting current leakage occurs at the surface of the semi-insulating GaAs sheet near the finish. The depth distribution of the EL2 trap was calculated by measuring the trap-fill voltage V_i of the leakage current corresponding to the depth of corrosion, which was in good agreement with the reported experimental results. A surface conduction mechanism based on the principle of external diffusion of EL2 is proposed. The calculated substrate I-V relationship is quantitatively consistent with the measurement results.