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报道了蓝宝石衬底 Al Ga N/ Ga N共栅共源器件的制备与特性 .该器件包括栅长为 0 .8μm共源器件与栅长为1μm的共栅器件 .实验表明 ,共栅器件的第二栅压会显著影响器件饱和电流与跨导特性 ,从而控制功率增益 .与共源器件相比 ,共栅共源器件表现出稍低的 f T、较低的反馈、显著增加的功率资用增益及较高的端口阻抗 .
The preparation and characteristics of a sapphire substrate AlGaN / GaN common gate common source device are reported.The device includes a common-gate device with a gate length of 0.8 μm and a common-gate device with a gate length of 1 μm. Experiments show that the common- The second gate voltage significantly affects the device saturation current and transconductance characteristics, thereby controlling the power gain.Compared to common-source devices, cascode devices exhibit slightly lower f T, lower feedback, significantly increased power consumption Gain and higher port impedance.