Growth, Structural and Optical Characterization of Se75Te17Ge8 Thin Films

• 作 者: SALIM S M LAHMAR A ZAYIED H SALEM A M SAKR G B BARROY P TELEB N EL MARSSI M
• 机 构: Electron Microscope and Thin Films Department,National Research Center,Laboratoire de Physique de La
• 出 处: Journal of the Chinese Ceramic Society
• 发表日期: 2015年02期
• 关键词: pulse laser deposition thin films amorphous semiconductors optical spectroscopy

Se75Te17Ge8 thin film was processed on glass substrates by a pulsed laser deposition technique. The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy-dispersive X-ray spectrometry. The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.

The ceramic target used for the deposition was prepared by a solid state sintering method in a vacuum sealed silica tube. The structural characterization was investigated by X-ray diffraction coupled with energy The optical parameters were determined from the transmittance and reflectance spectra of the prepared film. The Wemple and Di Domenico models both were appropriate to describe the experimental results. The optical absorption coefficient was analyzed to identify the type of the optical transition and determine the corresponding energy values.