,Observation of hopping transitions for delocalized electrons by temperature-dependent conductance i

• 作 者: Yang-Yan Guo Wei-Hua Han Xiao-Song Zhao Ya-Mei Dou Xiao-Di Zhang Xin-Yu Wu Fu-Hua Yang
• 机 构: Engineering Research Center for Semiconductor Integrated Technology & Beijing Engineering Center of
• 出 处: 中国物理B（英文版）
• 发表日期: 2019年10期
• 关键词: junctionless nanowire transistors temperature-dependent conductance variable ran

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2.The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vgl and Vg2.This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.