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原子层沉积(ALD)技术在制备薄膜时因具有厚度精确可控、三维均匀性好以及可以实现大面积成膜和低的成膜温度等优点而使其在各个领域受到广泛关注。本文采用ALD技术,以VO(acac)2和O2分别为钒源和氧源,使用不同的沉积温度(420~480℃)和退火条件(自然冷却、4和8h程序降温)在玻璃基底表面制备VO2薄膜。通过X-射线光电子能谱、X-射线衍射以及扫描电镜对薄膜的价态、结晶状况及表面微观形貌进行表征;通过四探针测试仪对所制备薄膜的半导体-金属相变特性进行了研究。实验结果表明:VO2薄膜相变特性与其微观结构和晶体取向有着直接关系。选择ALD脉冲时序为[10s-20s-20s-20s],循环周期数为300,在450℃沉积且采取自然冷却所制备的VO2薄膜结晶状态良好,相变前后薄膜方块电阻突变量大,具有良好的热致相变特性。因此,该ALD技术可以制备相变特性较好的VO2薄膜。
Atomic thin film deposition (ALD) technology in the preparation of thin films because of the precise controllable thickness, good three-dimensional uniformity and can achieve large-area film and low film-forming temperature and other advantages make its attention in various fields. In this paper, ALD technology was used to prepare VO (acac) 2 and O2 for vanadium and oxygen respectively on glass substrates using different deposition temperatures (420-480 ℃) and annealing conditions (natural cooling, 4 and 8h programs) VO2 film. The valence, crystallization state and surface morphology of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. The semiconductor-metal phase transition properties of the prepared films were characterized by four-probe tester the study. The experimental results show that the phase transition characteristics of VO2 thin films are directly related to their microstructure and crystal orientation. Select ALD pulse sequence as [10s-20s-20s-20s], cycle number of 300, deposited at 450 ℃ and natural cooling VO2 film prepared in good condition, the film before and after the change in resistance of the film has a large number of mutations, with good The thermal induced phase change characteristics. Therefore, the ALD technology can prepare VO2 thin films with better phase transition characteristics.