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华声报讯:南京大学、中科院物理所和摩托罗拉中国研究院在北京宣布,他们发现铝酸镧(LAO)和镧铝氧氮(LAON)这两种材料在所有候选的高介电常数材料中具有最好的热稳定性,能很经济地集成到传统的半导体工艺过程中,有希望在65纳米以下工艺中替代二氧化硅,用作半导体晶体管的栅介质层,或者用作半导体电容的介电材料,有望代替传统的二氧化硅,从而在下一代的半导体元器件制造中扮演重要角色。
WASCOM: Nanjing University, Institute of Physics Chinese Academy of Sciences and Motorola China Research Institute announced in Beijing that they found that both lanthanum aluminate (LAO) and lanthanum aluminum oxynitride (LAON) materials have the potential to be used in all candidate high dielectric constant materials The best thermal stability, which can be economically integrated into traditional semiconductor processes, is promising as a replacement for silicon dioxide in sub-65nm processes, as a gate dielectric for semiconductor transistors, or as a dielectric for semiconductor capacitors Material, is expected to replace the traditional silica, which in the next generation of semiconductor components play an important role in the manufacture.