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研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.
The effects of hydrogen atoms on the monolayer SnO2 and SnO2 / ZnO bilayer transparent conducting films during plasma discharge were investigated. It was found that the transmittance of SnO2 thin films was significantly reduced by H plasma treatment at a substrate temperature above 150 ℃. ZnO deposited on the surface of SnO2 film, the reduction effect of H atom on SnO2 can be effectively suppressed even if the thickness of ZnO film is 50 nm, and the crystallinity of 3.8% is obtained on the SnO2 / ZnO bilayer film Thin-film silicon solar cells.