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用电子背散射衍射(EBSD)技术对含3%Si(质量分数)低温渗氮HiB钢二次再结晶时高斯晶粒的长大机制进行了研究。研究加热温度对高斯晶粒异常长大、磁感应强度和铁损的影响,分析高斯晶粒异常长大的机理。研究结果表明:1000~1050℃这一温度区间为二次再结晶的最重要温度区间,在这一温度区间下,晶界以大角度晶界为主,晶粒取向差主要分布在20°~55°之间,满足高能晶界(HE)模型的条件,由于大角度晶界的高迁移速率使得高斯晶粒迅速长大从而使磁感应强度增加最快、铁损值下降最快。
The growth mechanism of Gaussian grains during secondary recrystallization of HiB steel with 3% Si (mass fraction) nitrided HiB steel was studied by electron backscatter diffraction (EBSD). The effects of heating temperature on Gaussian grain anomalies, magnetic induction and iron loss were investigated. The mechanism of Gaussian grain anomaly growth was analyzed. The results show that the temperature range from 1000 ℃ to 1050 ℃ is the most important temperature range for secondary recrystallization. Under this temperature range, the grain boundaries are dominated by large-angle grain boundaries and the grain orientation differences are mainly distributed in the range of 20 ° ~ 55 °, which satisfies the condition of high energy grain boundary (HE) model. Due to the high migration rate of large-angle grain boundaries, the Gauss grains grow rapidly and the magnetic induction intensity increases fastest and the iron loss decreases the fastest.