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采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备Mg_2Si半导体薄膜.首先在钠钙玻璃衬底上依次溅射一定厚度的Si、Mg薄膜,冷却至室温后原位退火4h,在400~600℃退火温度下制备出一系列Mg_2Si薄膜样品.采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对Mg_2Si薄膜样品的晶体结构和表面形貌进行表征,利用四探针测试仪测试薄膜样品的方块电阻,讨论了原位退火温度对Mg_2Si薄膜结构、表面形貌及电学性能的影响.结果表明,采用原位退火方式成功在钠钙玻璃衬底上制备出单一相的Mg_2Si薄膜,退火温度为550℃时,结晶度最好,连续性和致密性最强,方块电阻最小.这对后续Mg_2Si薄膜器件的设计与制备提供了重要的参考.
Mg_2Si semiconductor thin films were prepared on soda-lime glass substrate by magnetron sputtering and in-situ annealing process.After a certain thickness of Si and Mg thin films were sequentially sputtered on soda-lime glass substrates and annealed in situ for 4h after cooling to room temperature , A series of samples of Mg_2Si films were prepared at annealing temperature of 400 ~ 600 ℃. The crystal structure and surface morphology of Mg_2Si films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) The square resistance of Mg_2Si thin films was investigated by the tester, and the effect of in-situ annealing temperature on the structure, surface morphology and electrical properties of Mg_2Si films was discussed. The results show that single phase annealed in situ Mg_2Si film, the best crystallinity, the strongest continuity and compactness, and the lowest sheet resistance at the annealing temperature of 550 ℃, which provide an important reference for the design and preparation of subsequent Mg_2Si thin film devices.