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通过理论计算,对比分析了不同界面层对金属与n型锗(Ge)接触的影响。结果表明,界面层有利于降低费米能级钉扎效应,使金属与n型Ge接触的电子势垒高度降低。然而,由于界面层与Ge的导带之间存在带阶,界面层额外增加了不利的隧穿电阻。优化选择合适的界面层材料,降低电子势垒高度的同时减小隧穿电阻,有利于减小比接触电阻率。采用厚度为1.5 nm的Zn O作界面层,电子势垒高度为0.075 e V,比接触电阻率为2×10-8Ω·cm2,比无界面层的0.26Ω·cm2降低了7个数量级。
Through the theoretical calculation, the influence of different interface layers on the contact of metal with n-type germanium (Ge) was analyzed. The results show that the interfacial layer can reduce the Fermi level pinning effect and reduce the height of the electron barrier in contact with n-type Ge. However, due to the bandgap between the interface layer and the conduction band of Ge, the interfacial layer additionally adds adverse tunneling resistance. Optimize the selection of the appropriate interface layer material to reduce the height of the electron barrier at the same time reduce the tunneling resistance is conducive to reducing the specific resistance. Using Zn O as interface layer with a thickness of 1.5 nm, the electron barrier height is 0.075 eV, which is 7 orders of magnitude lower than the contact resistivity of 2 × 10-8Ω · cm2 and 0.26Ω · cm2 than the non-interface layer.