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利用射频溅射法在Si衬底上制备了SiCN薄膜,并利用X射线衍射(XRD)、红外吸收谱(FTIR)和X射线光电子谱(XPS)对薄膜的结构、成份及化学键合状态进行了分析。结果表明,室温制备的SiCN薄膜为非晶状态,并形成了Si-C、Si-N和C-N键;而在高温下(衬底温度为800oC),薄膜中含有SiCN的晶体成分。此外,还利用原子力显微镜(AFM)对薄膜的表面形貌进行了研究,并进一步研究了样品的场发射性能。在场强为24V/μm时,最大发射电流可达3.3mA/cm2。
SiCN thin films were prepared on Si substrate by RF sputtering and the structure, composition and chemical bonding state of the films were characterized by X-ray diffraction (XRD), infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy analysis. The results show that the SiCN films prepared at room temperature are amorphous and form Si-C, Si-N and C-N bonds. The films contain SiCN at high temperature (substrate temperature of 800oC). In addition, the surface morphology of the film was also studied by atomic force microscope (AFM), and the field emission properties of the samples were further studied. When the field strength is 24V / μm, the maximum emission current can reach 3.3mA / cm2.