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本文提出了一种利用异质结注入和电子飞越运动的GaAs双极晶体管,预期可以得到优异的性能。文中给出了消除GaAs表面有害影响的方法,这是实现这一器件的关键。
This paper presents a GaAs bipolar transistor that utilizes heterojunction injection and electron-flying over and is expected to achieve excellent performance. The article gives a method to eliminate the harmful effects of GaAs surface, which is the key to achieve this device.