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连续Ar~+激光再结晶能使多晶硅的电阻率下降,迁移率显著增高,对离子注入剂量为5×10~(11)—5×10~(15)cm~(-2)的多晶硅经激光再结晶后再进行等离子氢退火,能使其电学性质得到进一步改善,更接近于单晶硅.掺杂浓度为1×10~(17)cm~(-3)时,电阻率从1.2Ω·cm下降到0.45Ω·cm,迁移率从 62cm~2/V·s增高到 271cm~2/V·s,电激活能从 0.03eV下降到-0.007eV,晶界陷阱态密度从3.7×10~(11)cm~(-2)下降到 1.7×10~(11)cm~(-2)。本文在现有多晶硅导电模型的基础上.提出了大晶粒(L=15μm)多晶硅的计算公式。结果表明,在掺杂浓度在1×10~(16)—1×10~(20)cm~(-3)的范围内,理论和实验符合较好。
Continuous Ar ~ + laser recrystallization can decrease the resistivity of polycrystalline silicon and significantly increase the mobility. For polycrystalline silicon with dose of 5 × 10 ~ (11) -5 × 10 ~ (15) cm ~ (-2) After the recrystallization, the plasma hydrogen annealing can further improve its electrical properties and is closer to that of the single crystal silicon. The resistivity is 1.2Ω · (-1) when the doping concentration is 1 × 10 ~ (17) cm ~ (-3) cm to 0.45 Ω · cm, the mobility increased from 62cm 2 / V s to 271cm 2 / V s, the electrical activation energy decreased from 0.03eV to -0.007eV, and the grain boundary trapping density increased from 3.7 × 10 ~ (11) cm ~ (-2) to 1.7 × 10 ~ (11) cm ~ (-2). Based on the existing polycrystalline silicon conductivity model, this paper presents a formula for calculating the large-grained (L = 15μm) polycrystalline silicon. The results show that the theory and experiment are in good agreement with the doping concentration in the range of 1 × 10 ~ (16) -1 × 10 ~ (20) cm ~ (-3).