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一、引言制造高性能的 GaAs 金属半导体场效应晶体管非常强调材料和器件工艺。特别是砷化镓材料的生产不仅直接影响垠终器件的性能,而且是这两个工艺当中容易变化而又不好控制的一个工艺。如果器件加工工艺已经确定,那么就能够确定由于材料参数的变化所引起的器件性能的改进。更具体地说,源-漏欧姆接触应是低电阻的以及栅应形成电性能稳定的肖特基势垒。为谋求大量生产应用于 X 波段的1μm 栅长的低噪声 GaAs MESFET,我们报导了典型的接触电阻为0.1Ω·mm 的金/锗/镍欧姆接触系统的进展,以及典型的势垒为0.79V 的铝
I. INTRODUCTION Fabrication of high-performance GaAs metal-semiconductor field-effect transistors places great emphasis on materials and device technology. In particular, the production of gallium arsenide materials not only directly affect the performance of the end-device, but also a process that is easily changed and poorly controlled among the two processes. If the device processing technology has been determined, then it can be determined due to changes in material parameters caused by the improvement of device performance. More specifically, the source-drain ohmic contact should be low resistance and the gate should form a Schottky barrier that is electrically stable. In an effort to mass-produce low-noise GaAs MESFETs with 1-μm gate lengths for X-band applications, we report advances in gold / germanium / nickel ohmic contact systems with a typical contact resistance of 0.1 Ω · mm, with a typical barrier of 0.79 V Aluminum