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Oxygen plasma immersion ion implantation(PⅢ)has been conducted on AZ31Bmagnesium alloy using different bias voltages.The modified layer is mainly composed of MgOand some MgAl_2O_4.Results form Rutherford backscattering spectrometry(RBS)and X-rayphotoelectron spectroscopy(XPS)indicate that the bias voltage has a significant impact on thestructure of the films.The oxygen implant fluences and the thickness of the implanted layerincrease with higher bias voltages.A high bias voltage such as 60 kV leads to an unexpectedincrements in the oxygen-rich layer’s thickness compared to those of the samples implanted at20 kV and 40 kV.The hardness is hardly enhanced by oxygen PⅢ.The corrosion resistance ofmagnesium alloy may be improved by a proper implantation voltage.
Oxygen plasma immersion ion implantation (PIII) has been conducted on AZ31Bmagnesium alloy using different bias voltages. The modified layer is mainly composed of MgO and some MgAl_2O_4.Results form Rutherford backscattering spectrometry (RBS) and X-rayphotoelectron spectroscopy (XPS) indicate that the bias voltage has a significant impact on thestructureof the films.The oxygen implant fluences and the thickness of the implanted layerincrease with higher bias voltages. A high bias voltage such as 60 kV leads to an unexpectedincrements in the oxygen-rich layer’s thickness compared to those of the samples implanted at 20 kV and 40 kV.The hardness is hardly enhanced by oxygen PⅢ. The corrosion resistance of magnesium alloys may be improved by a proper implantation voltage.