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本文利用六甲基乙硅氧烷(HMDSO)和氧气(O2)为反应气体,利用微波电子回旋共振-射频双等离子体化学气相沉积法沉积氧化硅薄膜,并利用发射光谱对等离子体特性进行原位诊断.研究表明,RF偏压对氧化硅薄膜沉积速率和薄膜中的化学键结构产生有意义的影响.小的直流自偏压会略微提高沉积速率;但随着直流自偏压的增加,离子轰击效应及刻蚀作用加强,薄膜的沉积速率下降.在13.56MHz和400kHz两个不同射频频率条件下所沉积的薄膜中,O和Si的比例基本相同,均超过2∶1;但400kHz射频偏压下薄膜中的碳成分比例比13.56MHz条件下的要高得多.这可以归因为高的射频偏压的应用不仅可增强离子轰击效应,而且与体等离子体相互作用,使高活性的氧原子增多;而低频偏压的作用主要是增强离子轰击效应.
In this paper, hexamethyldisiloxane (HMDSO) and oxygen (O2) are used as reactive gases to deposit silicon oxide films by using microwave electron cyclotron resonance-radio frequency dual plasma chemical vapor deposition, and the plasma characteristics are also analyzed by using emission spectroscopy The results show that the RF bias has a significant effect on the deposition rate of silicon oxide film and the chemical bond structure in the thin film.The small DC self-bias will slightly increase the deposition rate, but with the increase of DC self-bias, The bombardment effect and etching effect are strengthened, and the deposition rate of the film is decreased. The proportion of O and Si in the films deposited at two different RF frequencies of 13.56MHz and 400kHz are basically the same, both exceeding 2: 1; however, The proportion of carbon in the pressed film is much higher than at 13.56 MHz, which can be attributed to the fact that the application of high RF bias not only enhances the ion bombardment effect but also interacts with bulk plasmons to make highly active oxygen Atomic increase; and the role of low-frequency bias is mainly to enhance ion bombardment effect.