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成功开发出了一种可用于纳米结构及器件制作的电子束与光学光刻的混合光刻工艺。通过两步光刻工艺,在栅结构层上采用大小图形数据分离的方法,使用光学光刻形成大尺寸栅引出电极结构,利用电子束直写形成纳米尺寸栅结构,并通过图形转移工艺解决两次光刻定义的栅结构的叠加问题。此混合光刻工艺技术可以解决纳米电子束直写光刻技术效率较低的问题,同时避免了电子束进行大面积、高密度图形曝光时产生严重邻近效应影响的问题。这项工艺技术已经应用于先进MOS器件的研发,并且成功制备出具有良好电学特性、最小栅长为26 nm的器件。
We have successfully developed a hybrid lithography process for electron beam and optical lithography for the fabrication of nanostructures and devices. A two-step photolithography process is adopted to separate the large and small graphic data on the gate structure layer, the large-scale gate lead-out electrode structure is formed by optical lithography, the nanometer-sized gate structure is formed by electron beam direct writing, and two Sub-lithography defines the superposition of the gate structure. The hybrid lithography technique can solve the problem of inefficient direct write lithography of nanometer electron beam and avoids the problem of serious proximity effect when large-area and high-density patterned electron beam are exposed. This process technology has been applied to the development of advanced MOS devices, and the successful fabrication of devices with good electrical characteristics with a minimum gate length of 26 nm.