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用液相外延方法生长了InGaAsP/InP四层双异质结,采用了镀金石英玻璃炉和水平滑动式石墨舟.研究了外延生长界面平直晶体质量好的InGaAsP/InP和InP/InGaAsP异质结的工艺细节.测量了异质结晶格失配度,确定了异质结匹配生长条件。研究了在InP液相外延中锌和碲的掺杂规律,分析了掺锌工艺对p-n结的位置、结的注入效率和其它结特性的影响.制作了质子轰击条形InGaAsP/InP DH激光器.在室温(300K)连续激射波长为1.30-1.33μm.室温宽接触激光器的阈电流密度为2000A/cm~2,规一化阈电流密度为5kA/cm~2·μ.测量了阈电流随温度的变化,在80—285K范围内特征温度T_o=79-108K,室温附近T_o=63-73K.选择两只激光器作了长期工作实验,其中一只寿命为560小时,另一只已经工作2500 小时,现仍在继续工作中.
The InGaAsP / InP four-layer double heterojunction was grown by liquid-phase epitaxy, and a gold-plated quartz glass furnace and a horizontal slide graphite boat were used. InGaAsP / InP and InP / InGaAsP heteroepitaxial The process details of the junction were measured, the degree of heterojunction lattice mismatch was measured, and the growth conditions for the heterojunction matching were determined. The doping regularity of zinc and tellurium in InP liquid-phase epitaxy was studied, and the effect of zinc-doping on the position of pn junction, the injection efficiency and other junction characteristics of junction was analyzed.The proton bombarded InGaAsP / InP DH laser was fabricated. The continuous lasing wavelength is 1.30-1.33μm at room temperature (300K) .The threshold current density of wide contact laser at room temperature is 2000 A / cm 2 and the normalized threshold current density is 5kA / cm 2 · μ.The threshold current Temperature changes in the range of 80-285K characteristic temperature T_o = 79-108K, near room temperature T_o = 63-73K. Select two lasers for long-term working experiments, one of the life of 560 hours, the other has been working 2500 Hours, is still continuing to work.