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采用多靶磁控溅射法制备了一系列具有不同TiB2调制层厚度的TiN/TiB2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明,在fcc-TiN层(111)生长面的模板作用下,原为非晶态的TiB2层在厚度小于2·9nm时形成hcp晶体态,并与fcc-TiN形成共格外延生长;其界面共格关系为{111}TiN//{0001}TiB2,〈110〉TiN//〈1120〉TiB2.由于共格界面存在晶格失配度,多层膜中形成拉、压交变的应力场,导致多层膜产生硬度和弹性模量升高的超硬效应,最高硬度和弹性模量分别达到46·9GPa和465GPa.继续增加TiB2层的厚度,TiB2形成非晶态并破坏了与TiN层的共格外延生长,多层膜形成非晶TiN层和非晶TiB2层交替的调制结构,其硬度和弹性模量相应降低.
A series of TiN / TiB2 multilayered films with different thickness of TiB2 modulation layer were prepared by multi-target magnetron sputtering method.The effects of the variation of TiB2 layer thickness on the growth of multi-target films were investigated by X-ray diffraction, high resolution electron microscopy and micro- The results show that under the template of fcc-TiN layer (111), the original amorphous TiB2 layer forms hcp crystal state when the thickness is less than 2.9 nm, fcc-TiN forms coextensive epitaxial growth, and its coherent relationship is {111} TiN // {0001} TiB2, <110> TiN // <1120> TiB2. Due to the existence of lattice mismatch at the coherent interface, The tensile stress and pressure changing stress field are formed in the film, which leads to the superhard effect of hardness and elastic modulus increase, the maximum hardness and elastic modulus reach 46 · 9GPa and 465GPa respectively.With the thickness of TiB2 layer increasing, TiB2 forms amorphous state and undermines the coexistence epitaxial growth with TiN layer. The multi-layer film forms the alternating modulation structure of amorphous TiN layer and amorphous TiB2 layer, and its hardness and elastic modulus decrease correspondingly.