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研究了干氧和氢氧合成两种不同工艺 CMOS运算放大器电路的电离辐照响应特征和变化规律。结果显示 ,虽然对单管特性而言 ,干氧工艺具有较强的抑制辐射感生氧化物电荷和界面态增长的能力 ,但由于在辐照过程中氧化物电荷的形成改变了电路的对称性 ,因而对电路造成比氢氧合成工艺更大的损伤。表明 ,适当的界面态的引入 ,有利于增加负载电流镜的饱和工作范围 ,从而降低电路的辐射敏感性。
The response characteristics and variation of ionizing radiation response of CMOS op amp circuits fabricated by dry oxygen and hydrogen-oxygen synthesis were studied. The results show that although the dry-oxygen process has a strong ability to suppress radiation-induced oxide charge and interface state growth for single-tube characteristics, the symmetry of the circuit changes due to the formation of oxide charges during irradiation , Thus causing greater damage to the circuit than the oxo process. It is shown that the appropriate interface state is introduced to increase the saturation operating range of the load current mirror and reduce the radiation sensitivity of the circuit.