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采用Ｓｏｌ－ｇｅｌ方法制备了ＧｅＯ２－ＳｉＯ２复合薄膜，并用Ｈ２／Ｎ２还原使得ＧｅＯ２转变成Ｇｅ微晶而镶嵌在ＳｉＯ２的玻璃网格中，其平均晶粒尺寸小于４ｎｍ 。随着热处理时间的增加，２４０ｎｍ 处吸收峰的强度随之增大，并且其吸收边产生红移，说明Ｇｅ 微晶的含量及晶粒尺寸都在增大
The GeO2-SiO2 composite thin films were prepared by Sol-gel method and converted into Ge microcrystals by H2 / N2 reduction. The GeO2 was embedded in a glass grid of SiO2 with an average grain size of less than 4 nm. With the increase of heat treatment time, the intensity of the absorption peak at 240 nm increases, and the red edge shifts to the absorption edge, indicating that both the content of Ge microcrystals and the grain size are increasing